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SRAM Chip Async Single 5V 256K-Bit 64K x 4-Bit 12ns 28-Pin SOJ

The CY7C195 are high-performance CMOS static RAMs organized as 65,536 by 4 bits. Easy memory expansion is provided by active LOW Chip Enable(s) (CE on the CY7C195, CE1/, CE2/) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable(s) (CE/ on the CY7C195, CE1/, CE2/) and Write Enable (WE/) inputs are both LOW. Data on the four input pins (I/O0 through I/O3) is written into the memory location, specified on the address pins (A0 through A15).The device is accomplished by taking the Chip Enable(s) (CE/ on the CY7C195, CE1/, CE2/) LOW, while Write Enable (WE/) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data I/O pins. A die coat is used to ensure alpha immunity.
  • High speed: 12 ns
  • Output enable (OE/) feature (7C195)
  • CMOS for optimum speed/power
  • Low active power: 880 mW
  • Low standby power: 220 mW
  • TTL-compatible inputs and outputs
  • Automatic power-down when deselected

Especificações

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 64 kWords
Density 256 Kb
Operating temperature 0 to 70 °C
Pin Count 28
Number Of Ports 1
Mounting Surface Mount
Address B 16 Bit
Number Of 4 Bit
Number Of 4 Bit
Maximum O 90 mA
Product description 18.11 x 7.62 x 2.41 mm
Maximum R 12 ns
Supplier SOJ
Typical O 5.0000 V
ECCN EAR99
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Lead Finish Tin/Lead
Max Proce 235
Msl Level 1|3
SKU: CY7C195B-12VC