SRAM Chip Async Single 5V 256K-Bit 64K x 4-Bit 12ns 28-Pin SOJ
The CY7C195 are high-performance CMOS static RAMs organized as 65,536 by 4 bits. Easy memory expansion is provided by active LOW Chip Enable(s) (CE on the CY7C195, CE1/, CE2/) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable(s) (CE/ on the CY7C195, CE1/, CE2/) and Write Enable (WE/) inputs are both LOW. Data on the four input pins (I/O0 through I/O3) is written into the memory location, specified on the address pins (A0 through A15).The device is accomplished by taking the Chip Enable(s) (CE/ on the CY7C195, CE1/, CE2/) LOW, while Write Enable (WE/) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data I/O pins. A die coat is used to ensure alpha immunity.
- High speed: 12 ns
- Output enable (OE/) feature (7C195)
- CMOS for optimum speed/power
- Low active power: 880 mW
- Low standby power: 220 mW
- TTL-compatible inputs and outputs
- Automatic power-down when deselected
规格参数
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 64 kWords |
| Density | 256 Kb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 28 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 16 Bit |
| Number Of | 4 Bit |
| Number Of | 4 Bit |
| Maximum O | 90 mA |
| Product description | 18.11 x 7.62 x 2.41 mm |
| Maximum R | 12 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Lead Finish | Tin/Lead |
| Max Proce | 235 |
| Msl Level | 1|3 |
SKU: CY7C195B-12VC