Plataforma de comércio de matérias-primas

SRAM Chip Async Single 3V 32M-Bit 2M x 16 55ns 48-Pin FBGA

The CY62177DV30 is a high-performance CMOS static RAM organized as 2M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption.
  • Very high speed: 55 ns
  • Wide voltage range: 2.20 V-3.60 V
  • Ultra-low active power
    • Typical active current: 2 mA at f = 1 MHz
    • Typical active current: 15 mA at f = fmax
  • Ultra low standby power
  • Easy memory expansion with CE/ and OE1/, CE2 and features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed/power
  • Packages offered in a 48-ball fine ball grid array (FBGA

Especificações

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 2 MWords
Density 32 Mb
Operating temperature -40 to 85 °C
Pin Count 48
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 30 mA
Product description 9.5 x 8 x 0.91 mm
Maximum R 55 ns
Supplier FBGA
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: CY62177DV30LL-55BAXI