SRAM Chip Async Single 3V 32M-Bit 2M x 16 55ns 48-Pin FBGA
The CY62177DV30 is a high-performance CMOS static RAM organized as 2M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption.
- Very high speed: 55 ns
- Wide voltage range: 2.20 V-3.60 V
- Ultra-low active power
- Typical active current: 2 mA at f = 1 MHz
- Typical active current: 15 mA at f = fmax
- Ultra low standby power
- Easy memory expansion with CE/ and OE1/, CE2 and features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed/power
- Packages offered in a 48-ball fine ball grid array (FBGA
Мүнözдөмөлөр
| Бренд | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 2 MWords |
| Density | 32 Mb |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 21 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 30 mA |
| Описание продукта | 9.5 x 8 x 0.91 mm |
| Maximum R | 55 ns |
| Supplier | FBGA |
| Typical O | 3.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY62177DV30LL-55BAXI