SRAM Chip Async Single 3V 16M-Bit 2M x 8 55ns 48-Pin VFBGA
The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.
- Very high speed
- 55 ns
- Wide voltage range
- 2.2 V-3.6 V
- Ultra-low active power
- Typical active current: 2 mA at f = 1 MHz
- Typical active current: 15 mA at f = fMax (55 ns Speed)
- Ultra-low standby power
- Easy memory expansion with CE1/, CE2 and OE/ features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed/power
- Available in non Pb-free 48-ball very fine ball grid array (VFBGA) package
Especificações
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 2 MWords |
| Density | 16 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 21 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 30 mA |
| Product description | 9.5 x 8 x 0.81 mm |
| Maximum R | 55 ns |
| Supplier | VFBGA |
| Typical O | 3.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Lead |
| Max Proce | 240 |
| Msl Level | 3 |
SKU: CY62168DV30LL-55BVI