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SRAM Chip Async Single 3V 16M-Bit 2M x 8 55ns 48-Pin VFBGA

The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.
  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2 V-3.6 V
  • Ultra-low active power
    • Typical active current: 2 mA at f = 1 MHz
    • Typical active current: 15 mA at f = fMax (55 ns Speed)
  • Ultra-low standby power
  • Easy memory expansion with CE1/, CE2 and OE/ features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed/power
  • Available in non Pb-free 48-ball very fine ball grid array (VFBGA) package

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 2 MWords
Density 16 Mb
Operating temperature -40 to 85 °C
Pin Count 48
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 30 mA
Product description 9.5 x 8 x 0.81 mm
Maximum R 55 ns
Supplier VFBGA
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
Lead Finish Tin/Lead
Max Proce 240
Msl Level 3
SKU: CY62168DV30LL-55BVI