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SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 10ns 44-Pin TSOP-II T/R

The IS61WV10248 are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61WV10248 are fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. The IS61WV10248 operate from a single power supply and all inputs are TTL-compatible. The IS61WV10248 are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages.
  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clocks or refresh required
  • TTL compatible inputs and outputs
  • Packages available:
    • 48-ball miniBGA (6mm x 8mm)
    • 44-pin TSOP (Type II)
  • Commercial and Industrial Temperature Support
  • Lead-free available.

Especificações

Brand ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 1 MWords
Density 8 Mbit
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 20 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 100 mA
Product description 18.52 x 10.29 x 1.05 mm
Maximum R 10 ns
Supplier TSOP-II
Typical O 3.3000 V
ECCN 3A991
Schedule B 8542320040
HTSN 8542320041
Country of origin China
Screening Level Industrial
Minimum O 2.4 V
Maximum O 3.6 V
Lead Finish Matte Tin
Max Proce 260 °C
Msl Level 3
SKU: IS61WV10248BLL-10TLI-TR