SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 10ns 44-Pin TSOP-II T/R
The IS61WV10248 are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61WV10248 are fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. The IS61WV10248 operate from a single power supply and all inputs are TTL-compatible. The IS61WV10248 are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages.
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clocks or refresh required
- TTL compatible inputs and outputs
- Packages available:
- 48-ball miniBGA (6mm x 8mm)
- 44-pin TSOP (Type II)
- Commercial and Industrial Temperature Support
- Lead-free available.
Especificaciones
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 8 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 100 mA |
| Product description | 18.52 x 10.29 x 1.05 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | China |
| Screening Level | Industrial |
| Minimum O | 2.4 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 °C |
| Msl Level | 3 |
SKU: IS61WV10248BLL-10TLI-TR