SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin LQFP
The IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).
- High-speed access time:
- 10, 12 ns
- CMOS low power operation
- Low stand-by power:
- Less than 5 mA (typ.) CMOS stand-by
- TTL compatible interface levels
- Single 3.3V power supply
- Fully static operation: no clock or refreshrequired
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
Especificações
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 110 mA |
| Product description | 10 x 10 x 1.45 mm |
| Maximum R | 10 ns |
| Supplier | LQFP |
| Typical O | 3.3000 V |
| ECCN | EAR99 |
| Schedule B | 8534000020 |
| HTSN | 8534000020 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 3.135 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS61LV25616AL-10LQLI