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SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin LQFP

The IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).
  • High-speed access time:
    • 10, 12 ns
  • CMOS low power operation
  • Low stand-by power:
    • Less than 5 mA (typ.) CMOS stand-by
  • TTL compatible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refreshrequired
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • Lead-free available

规格参数

Brand ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 4 Mbit
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 110 mA
Product description 10 x 10 x 1.45 mm
Maximum R 10 ns
Supplier LQFP
Typical O 3.3000 V
ECCN EAR99
Schedule B 8534000020
HTSN 8534000020
Country of origin Taiwan
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.6 V
Lead Finish Matte Tin
Max Proce 260
Msl Level 3
SKU: IS61LV25616AL-10LQLI