SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA Tray
The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
- FT pin for user-configurable flow through or pipeline operation
- Dual Cycle Deselect (DCD) operation
- IEEE 1149.1 JTAG-compatible Boundary Scan
- 1.8 V or 2.5 V core power supply
- 1.8 V or 2.5 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP and 165 BGA packages
- RoHS-compliant 100-lead TQFP and 165 BGA packages available
- 14 mm x 22 mm, 119 BGA, Green 13 mm x 15 mm, 165 FPBGA
Мүнözдөмөлөр
| Бренд | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 512 kWords |
| Density | 18 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 165 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Number Of | 36 Bit |
| Описание продукта | 15 x 13 x 0.94 mm |
| Typical O | 1.8, 2.5 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Minimum O | 1.7, 2.3 V |
| Maximum O | 2, 2.7 V |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Tin/Silver/Copper |
SKU: GS8161E36BGD-200IV