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SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA Tray

The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
  • FT pin for user-configurable flow through or pipeline operation
  • Dual Cycle Deselect (DCD) operation
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 1.8 V or 2.5 V core power supply
  • 1.8 V or 2.5 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Default to Interleaved Pipeline mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard 100-lead TQFP and 165 BGA packages
  • RoHS-compliant 100-lead TQFP and 165 BGA packages available
  • 14 mm x 22 mm, 119 BGA, Green 13 mm x 15 mm, 165 FPBGA

规格参数

Brand GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 512 kWords
Density 18 Mbit
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 4
Mounting Surface Mount
Number Of 36 Bit
Product description 15 x 13 x 0.94 mm
Typical O 1.8, 2.5 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Minimum O 1.7, 2.3 V
Maximum O 2, 2.7 V
Data Rate SDR
Architecture Flow-Through|Pipelined
Lead Finish Tin/Silver/Copper
SKU: GS8161E36BGD-200IV