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SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ

The ISSI IS61LV5128AL is a very high-speed, low power,524,288-word by 8-bit CMOS static RAM. TheIS61LV5128AL is fabricated using ISSI"s high-performanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldshigher performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 250 µW (typical) with CMOS input levels.The IS61LV5128AL operates from a single 3.3V powersupply and all inputs are TTL-compatible. The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin TSOP (Type II) packages.
  • High-speed access times: 10, 12 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE\ and OE\ options
  • CE\ power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single 3.3V power supply
  • Packages available:
    • 36-pin 400-mil SOJ
    • 36-pin miniBGA
    • 44-pin TSOP (Type II)
  • Lead-free available

Мүнözдөмөлөр

Бренд ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 512 kWords
Density 4 Mbit
Рабочая температура 0 to 70 °C
Pin Count 36
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 90 mA
Описание продукта 23.62 x 10.29 x 3.11 mm
Maximum R 10 ns
Supplier SOJ
Typical O 3.3000 V
ECCN EAR99
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Screening Level Commercial
Minimum O 3.135 V
Maximum O 3.63 V
Data Rate SDR
Lead Finish Tin|Lead
Max Proce 240 °C
Msl Level 3
SKU: IS61LV5128AL-10K