SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ
The ISSI IS61LV5128AL is a very high-speed, low power,524,288-word by 8-bit CMOS static RAM. TheIS61LV5128AL is fabricated using ISSI"s high-performanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldshigher performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 250 µW (typical) with CMOS input levels.The IS61LV5128AL operates from a single 3.3V powersupply and all inputs are TTL-compatible. The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin TSOP (Type II) packages.
- High-speed access times: 10, 12 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE\ and OE\ options
- CE\ power-down
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Single 3.3V power supply
- Packages available:
- 36-pin 400-mil SOJ
- 36-pin miniBGA
- 44-pin TSOP (Type II)
- Lead-free available
仕様
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 512 kWords |
| Density | 4 Mbit |
| Operating temperature | 0 to 70 °C |
| Pin Count | 36 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 90 mA |
| Product description | 23.62 x 10.29 x 3.11 mm |
| Maximum R | 10 ns |
| Supplier | SOJ |
| Typical O | 3.3000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Commercial |
| Minimum O | 3.135 V |
| Maximum O | 3.63 V |
| Data Rate | SDR |
| Lead Finish | Tin|Lead |
| Max Proce | 240 °C |
| Msl Level | 3 |
SKU: IS61LV5128AL-10K