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Trans GP BJT NPN 12V 0.02A 6-Pin SOT-363 T/R

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
  • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
  • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
  • Two (galvanic) internal isolated Transistors in one package
  • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads
  • Qualification report according to AEC-Q101 available

仕様

Brand Infineon
Operating temperature -65 to 150 °C
Minimum D 70@5mA@8V
Type Prod NPN
Lead Finish Matte Tin
Max Proce 260
Maximum E 2 V
Product description 2 x 1.25 x 0.9 mm
Maximum C 12 V
Maximum C 20 V
Supplier SOT-363
Maximum D 0.02 A
Maximum P 175 mW
Schedule B 8541210080
HTSN 8542390001
Country of origin United States
Msl Level 1
SKU: BFS 481 H6327