Trans GP BJT NPN 12V 0.02A 6-Pin SOT-363 T/R
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
- For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
- fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
- Two (galvanic) internal isolated Transistors in one package
- Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads
- Qualification report according to AEC-Q101 available
规格参数
| Brand | Infineon |
|---|---|
| Operating temperature | -65 to 150 °C |
| Minimum D | 70@5mA@8V |
| Type Prod | NPN |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Maximum E | 2 V |
| Product description | 2 x 1.25 x 0.9 mm |
| Maximum C | 12 V |
| Maximum C | 20 V |
| Supplier | SOT-363 |
| Maximum D | 0.02 A |
| Maximum P | 175 mW |
| Schedule B | 8541210080 |
| HTSN | 8542390001 |
| Country of origin | United States |
| Msl Level | 1 |
SKU: BFS 481 H6327