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SRAM Chip Async Single 5V 4M-Bit 256K x 16 15ns 44-Pin SOJ T/R

The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable (BHE) is LOW, then data from I/O pins is written into the location specified on the address pins.
  • Temperature range:
    • Commercial: 0 °C to 70 °C
    • Automotive-A: -40 °C to 85 °C
  • High speed
    • tAA = 15 ns
  • Low active power
  • Low CMOS standby power
    • 2.75 mW (max.)
  • 2.0 V data retention (400 ?W at 2.0 V retention)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in Pb-free and non Pb-free 44-pin TSOP II and molded 44-pin (400-Mil) SOJ packages

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 4 Mb
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 210 mA
Product description 28.7 x 10.29 x 2.92 mm
Maximum R 15 ns
Supplier SOJ
Typical O 5.0000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 4.5 V
Maximum O 5.5 V
Lead Finish Gold
Max Proce 260
Msl Level 3
SKU: CY7C1041BN-15VXIT