SRAM Chip Async Single 5V 4M-Bit 256K x 16 15ns 44-Pin SOJ T/R
The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable (BHE) is LOW, then data from I/O pins is written into the location specified on the address pins.
- Temperature range:
- Commercial: 0 °C to 70 °C
- Automotive-A: -40 °C to 85 °C
- High speed
- tAA = 15 ns
- Low active power
- Low CMOS standby power
- 2.75 mW (max.)
- 2.0 V data retention (400 ?W at 2.0 V retention)
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE and OE features
- Available in Pb-free and non Pb-free 44-pin TSOP II and molded 44-pin (400-Mil) SOJ packages
Specifications
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 210 mA |
| Product description | 28.7 x 10.29 x 2.92 mm |
| Maximum R | 15 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1041BN-15VXIT