Plateforme de commerce de matières premières

SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA

The CY7C1518V18 is a 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. On CY7C1518V18 the burst counter takes in the least significant bit of the external address and bursts two 18-bit words in the case of CY7C1518V18 sequentially into or out of the device.
  • 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
  • 300 MHz clock for high bandwidth
  • 2-word burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz
  • Two input clocks (K and K) for precise DDR timing
    • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Synchronous internally self-timed writes
  • 1.8V core power supply with HSTL inputs and outputs
  • Variable drive HSTL output buffers
  • Expanded HSTL output voltage (1.4V-VDD)
  • Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
  • Offered in both Pb-free and non Pb-free packages
  • JTAG 1149.1 compatible test access port
  • Delay Lock Loop (DLL) for accurate data placement

Caractéristiques

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 72 Mb
Operating temperature 0 to 70 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 22 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 700 mA
Product description 17 x 15 x 0.89 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Maximum C 200 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Lead/Silver|Tin/Lead
Max Proce 235
Msl Level 3
SKU: CY7C1518V18-200BZC