SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA
The CY7C1518V18 is a 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. On CY7C1518V18 the burst counter takes in the least significant bit of the external address and bursts two 18-bit words in the case of CY7C1518V18 sequentially into or out of the device.
- 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
- 300 MHz clock for high bandwidth
- 2-word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- 1.8V core power supply with HSTL inputs and outputs
- Variable drive HSTL output buffers
- Expanded HSTL output voltage (1.4V-VDD)
- Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
- Offered in both Pb-free and non Pb-free packages
- JTAG 1149.1 compatible test access port
- Delay Lock Loop (DLL) for accurate data placement
规格参数
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 4 MWords |
| Density | 72 Mb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 165 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 22 Bit |
| Number Of | 18 Bit |
| Number Of | 18 Bit |
| Maximum O | 700 mA |
| Product description | 17 x 15 x 0.89 mm |
| Maximum R | 0.45 ns |
| Supplier | FBGA |
| Typical O | 1.8000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Maximum C | 200 MHz |
| Data Rate | DDR |
| Architecture | Pipelined |
| Lead Finish | Tin/Lead/Silver|Tin/Lead |
| Max Proce | 235 |
| Msl Level | 3 |
SKU: CY7C1518V18-200BZC