SRAM Chip Async Single 5V 16K-Bit 2K x 8 35ns 24-Pin PDIP
The IDT6116SA is a 16,384-bit high-speed static RAM organizedas 2K x 8. It is fabricated using high-performance, high-reliability CMOStechnology. All inputs and outputs of the IDT6116SA is a TTL-compatible. Fullystatic asynchronous circuitry is used, requiring no clocks or refreshing foroperation. The IDT6116SA is packaged in 24-pin 300mil plastic DIP, 24-pin600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing highboard-level packing densities. Military grade product is manufactured in compliance to MIL-STD-883,Class B, making it ideally suited to military temperature applicationsdemanding the highest level of performance and reliability.
- High-speed access and chip select times
- Military: 20/25/35/45/55/70/90/120/150ns (max.)
- Industrial: 20/25ns (max.)
- Commercial: 15/20/25ns (max.)
- Low-power consumption
- Battery backup operation
- 2V data retention voltage (LA version only)
- Produced with advanced CMOS high-performance technology
- CMOS process virtually eliminates alpha particle soft-error rates
- Input and output directly TTL-compatible
- Static operation: no clocks or refresh required
- Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin Dip and 24-pin SOIC
- Military product compliant to MIL-STD-833, Class B
Caractéristiques
| Brand | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 2 kWords |
| Density | 16 Kb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 24 |
| Number Of Ports | 1 |
| Mounting | Through Hole |
| Address B | 11 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 100 mA |
| Product description | 31.75 x 6.6 x 3.3 mm |
| Maximum R | 35 ns |
| Supplier | PDIP |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Commercial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Tin/Lead |
SKU: 6116SA35TP