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SRAM Chip Async Single 5V 16K-Bit 2K x 8 35ns 24-Pin PDIP

The IDT6116SA is a 16,384-bit high-speed static RAM organizedas 2K x 8. It is fabricated using high-performance, high-reliability CMOStechnology. All inputs and outputs of the IDT6116SA is a TTL-compatible. Fullystatic asynchronous circuitry is used, requiring no clocks or refreshing foroperation. The IDT6116SA is packaged in 24-pin 300mil plastic DIP, 24-pin600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing highboard-level packing densities. Military grade product is manufactured in compliance to MIL-STD-883,Class B, making it ideally suited to military temperature applicationsdemanding the highest level of performance and reliability.
  • High-speed access and chip select times
    • Military: 20/25/35/45/55/70/90/120/150ns (max.)
    • Industrial: 20/25ns (max.)
    • Commercial: 15/20/25ns (max.)
  • Low-power consumption
  • Battery backup operation
    • 2V data retention voltage (LA version only)
  • Produced with advanced CMOS high-performance technology
  • CMOS process virtually eliminates alpha particle soft-error rates
  • Input and output directly TTL-compatible
  • Static operation: no clocks or refresh required
  • Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin Dip and 24-pin SOIC
  • Military product compliant to MIL-STD-833, Class B

Especificaciones

Brand Renesas Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 2 kWords
Density 16 Kb
Operating temperature 0 to 70 °C
Pin Count 24
Number Of Ports 1
Mounting Through Hole
Address B 11 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 100 mA
Product description 31.75 x 6.6 x 3.3 mm
Maximum R 35 ns
Supplier PDIP
Typical O 5.0000 V
ECCN EAR99
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 4.5 V
Maximum O 5.5 V
Lead Finish Tin/Lead
SKU: 6116SA35TP