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SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ

The ISSI IS61WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption. The IS61/64WV6416BLL is packaged in the JEDEC standard 44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini BGA (6mm x 8mm).
  • High-speed access time:
    • 12 ns: 3.3V + 10%
    • 15 ns: 2.5V-3.6V
  • CMOS low power operation:
    • 50 mW (typical) operating
    • 25 µW (typical) standby
  • TTL compatible interface levels
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Automotive Temperature Available
  • Lead-free available

Caractéristiques

Brand ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 64 kWords
Density 1 Mbit
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 16 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 45 mA
Product description 28.7 x 10.29 x 3.75 mm
Maximum R 12 ns
Supplier SOJ
Typical O 3.3000 V
ECCN 3A991
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Screening Level Industrial
Minimum O 2.97 V
Maximum O 3.63 V
Lead Finish Matte Tin
Max Proce 245
Msl Level 3
SKU: IS61WV6416BLL-12KLI