SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ
The ISSI IS61WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption. The IS61/64WV6416BLL is packaged in the JEDEC standard 44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini BGA (6mm x 8mm).
- High-speed access time:
- 12 ns: 3.3V + 10%
- 15 ns: 2.5V-3.6V
- CMOS low power operation:
- 50 mW (typical) operating
- 25 µW (typical) standby
- TTL compatible interface levels
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Automotive Temperature Available
- Lead-free available
Характеристики
| Бренд | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 64 kWords |
| Density | 1 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 16 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 45 mA |
| Описание продукта | 28.7 x 10.29 x 3.75 mm |
| Maximum R | 12 ns |
| Supplier | SOJ |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.97 V |
| Maximum O | 3.63 V |
| Lead Finish | Matte Tin |
| Max Proce | 245 |
| Msl Level | 3 |
SKU: IS61WV6416BLL-12KLI