B2B товарно-сырьевая площадка

NOR Flash Serial 1.8V 512Mbit 64M x 8bit 8ns 24-Pin BGA

The N25Q is a high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
  • Stacked device (two 256Mb die)
  • SPI-compatible serial bus interface
  • Double transfer rate (DTR) mode
  • 2.7–3.6V single supply voltage
  • 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode
  • 54 MHz (MAX) clock frequency supported for all protocols in DTR mode
  • Dual/quad I/O instruction provides increased throughput up to 54 MB/s
  • Supported protocols
    • Extended SPI, dual I/O, and quad I/O
    • DTR mode supported on all
  • Execute-in-place (XIP) mode for all three protocols
    • Configurable via volatile or nonvolatile registers
    • Enables memory to work in XIP mode directly after power-on
  • PROGRAM/ERASE SUSPEND operations
  • Available protocols
    • Available READ operations
    • Quad or dual output fast read
    • Quad or dual I/O fast read
  • Flexible to fit application
    • Configurable number of dummy cycles
    • Output buffer configurable
  • Software reset
  • Additional reset pin for selected part numbers 1
  • 3-byte and 4-byte addressability mode supported
  • 64-byte, user-lockable, one-time programmable (OTP) dedicated area
  • Erase capability
    • Subsector erase 4KB uniform granularity blocks
    • Sector erase 64KB uniform granularity blocks
    • Single die erase
  • Write protection
    • Software write protection applicable to every 64KB sector via volatile lock bit
    • Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB)
    • Additional smart protections, available upon request
  • Electronic signature
    • JEDEC-standard 2-byte signature (BA20h)
    • Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes)
  • Minimum 100,000 ERASE cycles per sector
  • More than 20 years data retention
  • Packages – JEDEC-standard, all RoHS-compliant
    • V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)
    • SOP2-16/300mils (also known as SO16W, SO16- Wide, SOIC-16)
    • T-PBGA-24b05/6mm x 8mm (also known as TBGA24)

Caractéristiques

Brand Micron
Maximum P 5/Page ms
Ecc Support Yes
Simultane No
Program Current 20 mA
Boot Block Yes
Block Org Symmetrical
Erase Sus Yes
Interface Type Serial
Programmi 1.7, 2, 8.5, 9.5 V
Density 512 Mb
Maximum R 8 ns
Maximum O 20 mA
Architecture Sectored
Typical O 1.8000 V
Product description 8 x 6 x 0.79 mm
Timing Type Synchronous
Operating temperature -40 to 85 °C
Address B 32 Bit
Maximum E 3/Sector s
Schedule B 8542320050
HTSN 8542320051
Country of origin Malaysia
Number Of Words 64 MWords
Number Of 8 Bit
Minimum O 1.7 V
Supplier BGA
Maximum O 2 V
Cell Type NOR
Location Bottom|Top
SKU: N25Q512A11G1240E