NOR Flash Serial 1.8V 512Mbit 64M x 8bit 8ns 24-Pin BGA
The N25Q is a high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
- Stacked device (two 256Mb die)
- SPI-compatible serial bus interface
- Double transfer rate (DTR) mode
- 2.7–3.6V single supply voltage
- 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode
- 54 MHz (MAX) clock frequency supported for all protocols in DTR mode
- Dual/quad I/O instruction provides increased throughput up to 54 MB/s
- Supported protocols
- Extended SPI, dual I/O, and quad I/O
- DTR mode supported on all
- Execute-in-place (XIP) mode for all three protocols
- Configurable via volatile or nonvolatile registers
- Enables memory to work in XIP mode directly after power-on
- PROGRAM/ERASE SUSPEND operations
- Available protocols
- Available READ operations
- Quad or dual output fast read
- Quad or dual I/O fast read
- Flexible to fit application
- Configurable number of dummy cycles
- Output buffer configurable
- Software reset
- Additional reset pin for selected part numbers 1
- 3-byte and 4-byte addressability mode supported
- 64-byte, user-lockable, one-time programmable (OTP) dedicated area
- Erase capability
- Subsector erase 4KB uniform granularity blocks
- Sector erase 64KB uniform granularity blocks
- Single die erase
- Write protection
- Software write protection applicable to every 64KB sector via volatile lock bit
- Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB)
- Additional smart protections, available upon request
- Electronic signature
- JEDEC-standard 2-byte signature (BA20h)
- Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes)
- Minimum 100,000 ERASE cycles per sector
- More than 20 years data retention
- Packages – JEDEC-standard, all RoHS-compliant
- V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)
- SOP2-16/300mils (also known as SO16W, SO16- Wide, SOIC-16)
- T-PBGA-24b05/6mm x 8mm (also known as TBGA24)
Spezifikationen
| Brand | Micron |
|---|---|
| Maximum P | 5/Page ms |
| Ecc Support | Yes |
| Simultane | No |
| Program Current | 20 mA |
| Boot Block | Yes |
| Block Org | Symmetrical |
| Erase Sus | Yes |
| Interface Type | Serial |
| Programmi | 1.7, 2, 8.5, 9.5 V |
| Density | 512 Mb |
| Maximum R | 8 ns |
| Maximum O | 20 mA |
| Architecture | Sectored |
| Typical O | 1.8000 V |
| Product description | 8 x 6 x 0.79 mm |
| Timing Type | Synchronous |
| Operating temperature | -40 to 85 °C |
| Address B | 32 Bit |
| Maximum E | 3/Sector s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Country of origin | Malaysia |
| Number Of Words | 64 MWords |
| Number Of | 8 Bit |
| Minimum O | 1.7 V |
| Supplier | BGA |
| Maximum O | 2 V |
| Cell Type | NOR |
| Location | Bottom|Top |
SKU: N25Q512A11G1240E