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SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin FBGA Tray

The CY7C2568XV18, and CY7C2570XV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 18-bit words (CY7C2568XV18), or 36-bit words (CY7C2570XV18) that burst sequentially into or out of the device.
  • 72-Mbit density (4 M × 18, 2 M × 36)
  • 633 MHz clock for high bandwidth
  • Two-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces (data transferred at 1266 MHz) at 633 MHz
  • Available in 2.5 clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
  • Echo Clocks (CQ and CQ) simplify data capture in high speed systems
  • Data valid pin (QVLD) to indicate valid data on the output
  • On-die termination (ODT) feature
  • For more, see pdf

Especificaciones

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 2 MWords
Density 72 Mb
Operating temperature 0 to 70 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 20 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 1230 mA
Product description 15 x 13 x 0.89 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 633 MHz
Data Rate DDR
Architecture Pipelined
Msl Level 3
SKU: CY7C2570XV18-633BZXC