SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin FBGA Tray
The CY7C2568XV18, and CY7C2570XV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 18-bit words (CY7C2568XV18), or 36-bit words (CY7C2570XV18) that burst sequentially into or out of the device.
- 72-Mbit density (4 M × 18, 2 M × 36)
- 633 MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at 1266 MHz) at 633 MHz
- Available in 2.5 clock cycle latency
- Two input clocks (K and K) for precise DDR timing
- Echo Clocks (CQ and CQ) simplify data capture in high speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- On-die termination (ODT) feature
- For more, see pdf
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 2 MWords |
| Density | 72 Mb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 165 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 36 Bit |
| Number Of | 36 Bit |
| Maximum O | 1230 mA |
| Product description | 15 x 13 x 0.89 mm |
| Maximum R | 0.45 ns |
| Supplier | FBGA |
| Typical O | 1.8000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Commercial |
| Minimum O | 1.7 V |
| Maximum O | 1.9 V |
| Maximum C | 633 MHz |
| Data Rate | DDR |
| Architecture | Pipelined |
| Msl Level | 3 |
SKU: CY7C2570XV18-633BZXC