SRAM Chip Async Single 3V 32M-Bit 2M x 16 70ns 48-Pin FBGA
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas"s high-performance 0.15um CMOS and TFT technologies.The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced LPSRAMs are assembled in one package.The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.
- Single 2.7-3.6V power supply
- Small stand-by current:4µA (3.0V, typ.)
- Data retention supply voltage =2.0V
- No clocks, No refresh
- All inputs and outputs are TTL compatible.
- Easy memory expansion by CS1#, CS2, LB# and UB#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE# prevents data contention on the I/O bus
- Process technology: 0.15um CMOS
Especificaciones
| Brand | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 2 MWords |
| Density | 32 Mb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 21 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 55 mA |
| Product description | 8.5 x 7.5 mm |
| Maximum R | 70 ns |
| Supplier | FBGA |
| Typical O | 3.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Silver/Copper |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: R1WV3216RBG-7SR#B0