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SRAM Chip Async Single 3V 32M-Bit 2M x 16 70ns 48-Pin FBGA

The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas"s high-performance 0.15um CMOS and TFT technologies.The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced LPSRAMs are assembled in one package.The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.
  • Single 2.7-3.6V power supply
  • Small stand-by current:4µA (3.0V, typ.)
  • Data retention supply voltage =2.0V
  • No clocks, No refresh
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS1#, CS2, LB# and UB#
  • Common Data I/O
  • Three-state outputs: OR-tie capability
  • OE# prevents data contention on the I/O bus
  • Process technology: 0.15um CMOS

Характеристики

Бренд Renesas Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 2 MWords
Density 32 Mb
Рабочая температура 0 to 70 °C
Pin Count 48
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 55 mA
Описание продукта 8.5 x 7.5 mm
Maximum R 70 ns
Supplier FBGA
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Страна происхождения United States
Minimum O 2.7 V
Maximum O 3.6 V
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: R1WV3216RBG-7SR#B0