NOR Flash Parallel/Serial 2.5V/3.3V 128Mbit 8M x 16bit 60ns 64-Pin BGA Tray
P33-65nm SBC device is offered in 64-Mbit and 128-Mbit densities. Benefits include high-speed interface NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and two industry-standard package choices. P33-65nm SBC device is manufactured using 65nm process technology.
- High performance:
- 60ns initial access time for Easy BGA
- 70ns initial access time for TSOP
- 25ns 8-word asynchronous-page read mode
- 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode
- 4-, 8-, 16-, and continuous-word options for burst mode
- 3.0V buffered programming at 1.8MByte/s (Typ) using 256-word buffer
- Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer
- Architecture:
- Asymmetrically-blocked architecture
- Four 32-KByte parameter blocks: top or bottom configuration
- 128-KByte main blocks
- Blank Check to verify an erased block
- Voltage and Power:
- VCC (core) voltage: 2.3V – 3.6V
- VCCQ (I/O) voltage: 2.3V – 3.6V
- Standby current: 35µA(Typ) for 64-Mbit, 50µA(Typ) for 128-Mbit
- Continuous synchronous read current: 23mA (Typ) at 52 MHz
- Security:
- One-Time Programmable Registers:
- 64 OTP bits, programmed with unique information by Numonyx
- 2112 OTP bits, available for customer programming
- Absolute write protection: VPP = VSS
- Power-transition erase/program lockout
- Individual zero-latency block locking
- Individual block lock-down capability
- Password Access feature
- Software:
- 20µs (Typ) program suspend
- 20µs (Typ) erase suspend
- Basic Command Set and Extended Function Interface (EFI) Command Set compatible
- Common Flash Interface capable
- Density and Packaging:
- 56-Lead TSOP package (128-Mbit, 64-Mbit)
- 64-Ball Easy BGA package (128-Mbit, 64- Mbit)
- 16-bit wide data bus
- Quality and Reliability:
- JESD47E Compliant
- Operating temperature: –40°C to +85°C
- Minimum 100,000 erase cycles per block
- 65nm process technology
Especificaciones
| Brand | Micron |
|---|---|
| Maximum P | 0.175/Word ms |
| Ecc Support | No |
| Simultane | No |
| Lead Finish | Tin/Lead |
| Boot Block | Yes |
| Block Org | Asymmetrical |
| Erase Sus | Yes |
| Interface Type | Parallel|Serial |
| Programmi | 8.5, 9.5 V |
| Density | 128 Mb |
| Typical O | 2.5, 3.3 V |
| Product description | 10 x 8 x 0.78 mm |
| Timing Type | Asynchronous|Synchronous |
| Operating temperature | -40 to 85 °C |
| Maximum E | 4/Main Block s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Number Of Words | 8 MWords |
| Number Of | 16 Bit |
| Cell Type | NOR |
| Location | Top |
| Maximum P | 25 ns |
SKU: RC28F128P33TF60A