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NOR Flash Parallel/Serial 2.5V/3.3V 128Mbit 8M x 16bit 60ns 64-Pin BGA Tray

P33-65nm SBC device is offered in 64-Mbit and 128-Mbit densities. Benefits include high-speed interface NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and two industry-standard package choices. P33-65nm SBC device is manufactured using 65nm process technology.
  • High performance:
    • 60ns initial access time for Easy BGA
    • 70ns initial access time for TSOP
    • 25ns 8-word asynchronous-page read mode
    • 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode
    • 4-, 8-, 16-, and continuous-word options for burst mode
    • 3.0V buffered programming at 1.8MByte/s (Typ) using 256-word buffer
    • Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer
  • Architecture:
    • Asymmetrically-blocked architecture
    • Four 32-KByte parameter blocks: top or bottom configuration
    • 128-KByte main blocks
    • Blank Check to verify an erased block
  • Voltage and Power:
    • VCC (core) voltage: 2.3V – 3.6V
    • VCCQ (I/O) voltage: 2.3V – 3.6V
    • Standby current: 35µA(Typ) for 64-Mbit, 50µA(Typ) for 128-Mbit
    • Continuous synchronous read current: 23mA (Typ) at 52 MHz
  • Security:
    • One-Time Programmable Registers:
    • 64 OTP bits, programmed with unique information by Numonyx
    • 2112 OTP bits, available for customer programming
    • Absolute write protection: VPP = VSS
    • Power-transition erase/program lockout
    • Individual zero-latency block locking
    • Individual block lock-down capability
    • Password Access feature
  • Software:
    • 20µs (Typ) program suspend
    • 20µs (Typ) erase suspend
    • Basic Command Set and Extended Function Interface (EFI) Command Set compatible
    • Common Flash Interface capable
  • Density and Packaging:
    • 56-Lead TSOP package (128-Mbit, 64-Mbit)
    • 64-Ball Easy BGA package (128-Mbit, 64- Mbit)
    • 16-bit wide data bus
  • Quality and Reliability:
    • JESD47E Compliant
    • Operating temperature: –40°C to +85°C
    • Minimum 100,000 erase cycles per block
    • 65nm process technology

规格参数

Brand Micron
Maximum P 0.175/Word ms
Ecc Support No
Simultane No
Lead Finish Tin/Lead
Boot Block Yes
Block Org Asymmetrical
Erase Sus Yes
Interface Type Parallel|Serial
Programmi 8.5, 9.5 V
Density 128 Mb
Typical O 2.5, 3.3 V
Product description 10 x 8 x 0.78 mm
Timing Type Asynchronous|Synchronous
Operating temperature -40 to 85 °C
Maximum E 4/Main Block s
Schedule B 8542320050
HTSN 8542320051
Number Of Words 8 MWords
Number Of 16 Bit
Cell Type NOR
Location Top
Maximum P 25 ns
SKU: RC28F128P33TF60A