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SRAM Chip Async Single 5V 256K-Bit 32K x 8 70ns 32-Pin TSOP-I

The M5M5256DVP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.Especially the M5M5256DVP is packaged in a 28-pin thin small outline package.M5M5256DVP (normal lead bend type package).Using this type of device, it becomes very easy to design a printed circuit board.
  • Power supply current
    • Active (max): 55mA (Vcc=5.5V)
    • Stand-by (max): 20µA (Vcc=5.5V), 5µA (Vcc=5.5V), 0.05µA (Vcc=3.0V, Typical)
  • Single +5V power supply
  • No clocks, no refresh
  • Data-Hold on +2.0V power supply
  • Directly TTL compatible : all inputs and outputs
  • Three-state outputs : OR-tie capability
  • /OE prevents data contention in the I/O bus
  • Common Data I/O
  • Battery backup capability
  • Low stand-by current: 0.05µA(typ.)

Spezifikationen

Brand Renesas Electronics
Timing Type Asynchronous
Number Of Words 32 kWords
Density 256 Kb
Operating temperature -40 to 85 °C
Pin Count 32
Number Of Ports 1
Mounting Surface Mount
Address B 15 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 45 mA
Product description 8 x 11.8 x 1 mm
Maximum R 70 ns
Supplier TSOP-I
Typical O 5.0000 V
ECCN EAR99
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Minimum O 4.5 V
Maximum O 5.5 V
Lead Finish Tin/Copper
Max Proce 260
Msl Level 2
SKU: M5M5256DVP-70LLIBE