SRAM Chip Async Single 5V 256K-Bit 32K x 8 70ns 32-Pin TSOP-I
The M5M5256DVP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.Especially the M5M5256DVP is packaged in a 28-pin thin small outline package.M5M5256DVP (normal lead bend type package).Using this type of device, it becomes very easy to design a printed circuit board.
- Power supply current
- Active (max): 55mA (Vcc=5.5V)
- Stand-by (max): 20µA (Vcc=5.5V), 5µA (Vcc=5.5V), 0.05µA (Vcc=3.0V, Typical)
- Single +5V power supply
- No clocks, no refresh
- Data-Hold on +2.0V power supply
- Directly TTL compatible : all inputs and outputs
- Three-state outputs : OR-tie capability
- /OE prevents data contention in the I/O bus
- Common Data I/O
- Battery backup capability
- Low stand-by current: 0.05µA(typ.)
规格参数
| Brand | Renesas Electronics |
|---|---|
| Timing Type | Asynchronous |
| Number Of Words | 32 kWords |
| Density | 256 Kb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 15 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 45 mA |
| Product description | 8 x 11.8 x 1 mm |
| Maximum R | 70 ns |
| Supplier | TSOP-I |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Tin/Copper |
| Max Proce | 260 |
| Msl Level | 2 |
SKU: M5M5256DVP-70LLIBE