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SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 15ns 28-Pin SOJ

The CY7C106BN ishigh-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable, an active LOW Output Enable, and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.
  • High speed
    • tAA = 15 ns
  • CMOS for optimum speed/power
  • Low active power
    • 495 mW
  • Low standby power
    • 275 mW
  • 2.0V data retention (optional)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs

Spezifikationen

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 1 Mbit
Operating temperature 0 to 70 °C
Pin Count 28
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 4 Bit
Number Of 4 Bit
Maximum O 80 mA
Product description 18.54 x 10.29 x 2.62 mm
Maximum R 15 ns
Supplier SOJ
Typical O 5.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 4.5 V
Maximum O 5.5 V
Lead Finish Tin/Lead
Max Proce 220
Msl Level 3
SKU: CY7C106BN-15VC