SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 15ns 28-Pin SOJ
The CY7C106BN ishigh-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable, an active LOW Output Enable, and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.
- High speed
- tAA = 15 ns
- CMOS for optimum speed/power
- Low active power
- 495 mW
- Low standby power
- 275 mW
- 2.0V data retention (optional)
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
Характеристики
| Бренд | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 1 Mbit |
| Рабочая температура | 0 to 70 °C |
| Pin Count | 28 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 4 Bit |
| Number Of | 4 Bit |
| Maximum O | 80 mA |
| Описание продукта | 18.54 x 10.29 x 2.62 mm |
| Maximum R | 15 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Screening Level | Commercial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Tin/Lead |
| Max Proce | 220 |
| Msl Level | 3 |
SKU: CY7C106BN-15VC