SRAM Chip Async Dual 5V 1M-Bit 1M x 1 10ns 28-Pin SOJ
The CY7C107D is high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and tri-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
- Pin- and function-compatible with CY7C107B/CY7C1007B
- High speed
- tAA = 10 ns
- Low active power
- ICC = 80 mA @ 10 ns
- Low complementary metal oxide semiconductor (CMOS) standby power
- ISB2 = 3 mA
- 2.0 V data retention
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Transistor transistor logic (TTL) compatible inputs and outputs
- CY7C107D available in Pb-free 28-pin 400-Mil wide Molded SOJ package. CY7C1007D available in Pb-free 28-pin 300-Mil wide Molded SOJ package
Spezifikationen
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 1 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 28 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 1 Bit |
| Number Of | 1 Bit |
| Maximum O | 80 mA |
| Product description | 18.54 x 10.29 x 2.62 mm |
| Maximum R | 10 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320070 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C107D-10VXI