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SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.4ns 100-Pin TQFP

The CY7C1370CV25 is 2.5V, 512K x 36 and 1M x 18 Synchronous pipelined burst SRAMs with No Bus Latency (NoBL?) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states. The CY7C1370CV25 are equipped with the advanced (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent Write/Read transitions. The CY7C1370CV25 are pin compatible and functionally equivalent to ZBT devices. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the Byte Write Selects (BWa–BWd for CY7C1370CV25 and BWa–BWb for a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.
  • Pin-compatible and functionally equivalent to ZBT™
  • Supports 250-MHz bus operations with zero wait states
    • Available speed grades are 250, 225, 200 and 167 MHz
  • Internally self-timed output buffer control to eliminate the need to use asynchronous OE
  • Fully registered (inputs and outputs) for pipelined operation
  • Byte Write capability
  • Single 2.5V power supply
  • Fast clock-to-output times
    • 2.6 ns (for 250-MHz device)
    • 2.8 ns (for 225-MHz device)
    • 3.0 ns (for 200-MHz device)
    • 3.4 ns (for 167-MHz device)
  • Clock Enable (CEN) pin to suspend operation
  • Synchronous self-timed writes
  • Available in 100 TQFP, 119 BGA, and 165 fBGA packages
  • IEEE 1149.1 JTAG Boundary Scan
  • Burst Capability linear or interleaved burst order
  • “ZZ” Sleep Mode option and Stop Clock option

Especificações

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 512 kWords
Density 18 Mb
Operating temperature 0 to 70 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 275 mA
Product description 20 x 14 x 1.4 mm
Maximum R 3.4 ns
Supplier TQFP
Typical O 2.5000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 2.375 V
Maximum O 2.625 V
Maximum C 167 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Tin/Lead
Max Proce 220
Msl Level 3|5
SKU: CY7C1370CV25-167AC