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SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA Tray

DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization.DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution.QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions.

Especificações

Brand Renesas Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 72 Mb
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 20 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 920 mA
Product description 17 x 15 x 1.03 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 450 MHz
Data Rate DDR
Lead Finish Tin/Silver/Copper
Max Proce 260
SKU: R1QEA7218ABG-22IB0