SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3ns 100-Pin TQFP Tray

The CY7C1360C/CY7C1362C SRAM integrates 256 K × 36 and 512 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth-expansion chip enables (CE2 and CE3[1]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWX, and BWE), and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin.

• Supports bus operation up to 200 MHz
• Available speed grades: 200 MHz, and 166 MHz
• Registered inputs and outputs for pipelined operation
• 3.3 V core power supply (VDD)
• 2.5 V/3.3 V I/O operation (VDDQ)
• Fast clock-to-output times
  • 3.0 ns (for 200 MHz device)
• Provide high performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel? Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single cycle chip deselect
• TQFP available with 3-chip enable and 2-chip enable
• IEEE 1149.1 JTAG-compatible boundary scan