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SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 6.5ns 165-Pin FBGA

The CY7C1373D is a 3.3 V, 512 K × 36/1 M × 18 synchronous flow through burst SRAM designed specifically to support unlimited true back-to-back read/write operations with no wait state insertion. The CY7C1373D is a equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device). Write operations are controlled by the two or four byte write select (BWX) and a write enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank selection and output tristate control. To avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence.
  • No Bus Latency? (NoBL?) architecture eliminates dead cycles between write and read cycles
  • Supports up to 133-MHz bus operations with zero wait states
  • Data is transferred on every clock
  • Pin-compatible and functionally equivalent to ZBT™ devices
  • Internally self-timed output buffer control to eliminate the need to use OE
  • Registered inputs for flow through operation
  • Byte write capability
  • 3.3 V/2.5 V I/O power supply (VDDQ)
  • Fast clock-to-output times
  • 6.5 ns (for 133-MHz device)
  • Clock enable (CEN) pin to enable clock and suspend operation
  • Synchronous self-timed writes
  • Asynchronous output enable
  • Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 119-ball BGA, and 165-ball FBGA packages
  • Three chip enables for simple depth expansion
  • Automatic power-down feature available using ZZ mode or CE deselect
  • IEEE 1149.1 JTAG-compatible boundary scan
  • Burst capability - linear or interleaved burst order
  • Low standby power

Especificações

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 18 Mbit
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 2
Mounting Surface Mount
Address B 20 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 210 mA
Product description 15 x 13 x 0.89 mm
Maximum R 6.5 ns
Supplier FBGA
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 133 MHz
Data Rate SDR
Architecture Flow-Through
Lead Finish Tin/Lead
Max Proce 235
Msl Level 3
SKU: CY7C1373D-133BZI