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SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 44-Pin TSOP-II

The CY62146GN is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80 percent when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99 percent when deselected (CE\ HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE\ HIGH), outputs are disabled (OE\ HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE\, BLE\ HIGH), or a write operation is in progress (CE\ LOW and WE\ LOW). To write to the device, take Chip Enable (CE\) and Write Enable (WE\) input LOW. If Byte Low Enable (BLE\) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE\) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). To read from the device, take Chip Enable (CE\) and Output Enable (OE\) LOW while forcing the Write Enable (WE\) HIGH. If Byte Low Enable (BLE\) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE\) is LOW, then data from memory appears on I/O8 to I/O15.
  • Very high speed: 45 ns
  • Temperature range: Industrial -40 °C to +85 °C
  • Wide voltage range: 2.20 V to 3.60 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 3.5 µA
    • Maximum standby current: 8.7 µA
  • Ultra low active power
    • Typical active current: 3.5 mA at f = 1 MHz
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) foroptimum speed and power
  • Available in a 44-pin TSOP II and 48-ball VFBGA Packages

Especificações

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 4 Mbit
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 20 mA
Product description 18.517 x 10.262 x 1.044 mm
Maximum R 45 ns
Supplier TSOP-II
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320070
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
SKU: CY62146GN30-45ZSXI