SRAM Chip Async Single 1.8V 4M-Bit 256K x 16 45ns 48-Pin VFBGA

The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).

• Very high speed: 55 ns
• Wide voltage range: 1.65 V to 2.25 V
• Pin compatible with CY62147DV18
• Ultra low standby power
  • Typical standby current: 1 µA
  • Maximum standby current: 7 µA
• Ultra low active power
  • Typical active current: 2 mA at f = 1 MHz
• Ultra low standby power
• Easy memory expansion with CE/ and OE/ and features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Available in a Pb-free 48-ball very fine ball grid array (VFBGA) package