Trans GP BJT NPN 5.5V 0.01A 4-Pin(3+Tab) DFP T/R
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
- 40 GHz fT silicon technology
- High associated gain 12 dB at 5.8 GHz
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.7 dB at 5.8 GHz
Мүнözдөмөлөр
| Бренд | NXP |
|---|---|
| Рабочая температура | -65 to 150 °C |
| Minimum D | 90@1mA@2V |
| Type Prod | NPN |
| Lead Finish | Tin |
| Max Proce | 260 |
| Maximum E | 2.5 V |
| Описание продукта | 2.2 x 1.35 x 0.75 mm |
| Maximum C | 5.5 V |
| Maximum C | 16 V |
| Supplier | DFP |
| Maximum D | 0.01 A |
| Maximum P | 136 mW |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Страна происхождения | Malaysia |
| Msl Level | 1 |
| Channel Type | N |
SKU: BFU610F,115