SRAM Chip Sync Quad 2.5V/3.3V 9M-Bit 256K x 36 7.5ns/3.8ns 100-Pin TQFP Tray
The GS88036BT is a 9,437,184-bit (8,388,608-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising edge-triggered Data Output Register. The GS88036BT is a SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers. Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs.
- FT pin for user-configurable flow through or pipeline operation
- Single Cycle Deselect (SCD) operation
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP package
- Pb-Free 100-lead TQFP package available
Мүнözдөмөлөр
| Бренд | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 256 kWords |
| Density | 9 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 100 |
| Number Of Ports | 4 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 36 Bit |
| Number Of | 36 Bit |
| Maximum O | 150@Flow-Through|160@Pipelined mA |
| Описание продукта | 20 x 14 x 1.4 mm |
| Maximum R | 7.5@Flow-Through|3.8@Pipelined ns |
| Supplier | TQFP |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320070 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Screening Level | Industrial |
| Minimum O | 2.3, 3 V |
| Maximum O | 2.7, 3.6 V |
| Maximum C | 133.3@Flow-Through|150@Pipelined MHz |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: GS88036BGT-150I