SRAM Chip Async Single 5V 64K-Bit 8K x 8 35ns 28-Pin SOIC T/R

The CY7C185[1] is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and tri-state drivers. This device has an automatic power-down feature (CE1 or CE2), reducing the power consumption by 70% when deselected. The CY7C185 is in a standard 300-mil-wide DIP, SOJ, or SOIC package. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the device is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input or output pins. The input or output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha immunity.

• High speed
• 15 ns
• Fast tDOE
• Low active power
  • 715 mW
• Low standby power
  • 85 mW
• CMOS for optimum speed/power
• Easy memory expansion with CE1, CE2 and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• Available in non Pb-free 28-pin (300-Mil) Molded SOJ, 28-pin (300-Mil) Molded SOIC and Pb-free 28-pin (300-Mil) Molded DIP