SRAM Chip Async Single 3V 4M-Bit 256KWord x 16 45ns 44-Pin TSOP Embossed T/R
The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.
- Single 3V supply: 2.7V to 3.6V
- Access time: 45ns (max.)
- Current consumption:
- Standby: 0.4µA (typ.)
- Equal access and cycle times
- Common data input and output
- Three state output
- Directly TTL compatible
- All inputs and outputs
- Battery backup operation
Мүнözдөмөлөр
| Бренд | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mbit |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 25 mA |
| Описание продукта | 18.41 x 10.16 x 1 |
| Maximum R | 45 ns |
| Supplier | TSOP |
| Typical O | 3.0000 V |
| ECCN | 3A991 |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Страна происхождения | United States |
| Screening Level | Industrial |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: RMLV0416EGSB-4S2#HA0