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SRAM Chip Async Single 3V 1M-Bit 64K x 16 70ns 44-Pin TSOP-II Tray

The N01L6183A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L6183A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40 Deg C to +85 Deg C and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs.
  • Single Wide Power Supply Range 1.65 to 2.2 Volts
  • Very low standby current 0.5µA at 1.8V (Typical)
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical)
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion
  • Low voltage data retention Vcc = 1.2V
  • Very fast output enable access time 30ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package available

Мүнözдөмөлөр

Бренд ON Semiconductor
Datasheet PDF
Timing Type Asynchronous
Number Of Words 64 kWords
Density 1 Mbit
Рабочая температура -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 16 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 14 mA
Описание продукта 18.41 x 10.16 x 1.05 mm
Maximum R 70 ns
Supplier TSOP-II
Typical O 3.0000 V
ECCN EAR99
Schedule B 8542320070
HTSN 8542320041
Страна происхождения United States
Minimum O 2.3 V
Maximum O 3.6 V
Max Proce 260
Msl Level 3
SKU: N01L63W3AT25I