SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ T/R
The ISSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
- High-speed access time: 8, 10, 12 ns
- CMOS low power operation
- 75 mW (typical) operating current
- 0.5 mW (typical) standby current
- TTL compatible interface levels
- Single 3.3V power supply
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
Мүнözдөмөлөр
| Бренд | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 64 kWords |
| Density | 1 Mbit |
| Рабочая температура | 0 to 70 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 16 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 100 mA |
| Описание продукта | 28.7 x 10.29 x 3.11 mm |
| Maximum R | 12 ns |
| Supplier | SOJ |
| Typical O | 3.3000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | Taiwan |
| Screening Level | Commercial |
| Minimum O | 2.97 V |
| Maximum O | 3.63 V |
| Data Rate | SDR |
| Lead Finish | Matte Tin |
| Max Proce | 260 °C |
| Msl Level | 3 |
SKU: IS61LV6416-12KL-TR