SRAM Chip Async Single 2.8V/3.3V 4M-Bit 256K x 16 45ns 48-Pin Mini-BGA T/R

The IS62WV25616EBLL are high speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The IS62WV25616EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).

• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation
  • Operating Current: 22 mA (max) at 85°C
  • CMOS Standby Current: 3.7uA (typ) at 25°C
• TTL compatible interface levels
• Single power supply: 2.2V-3.6V Vdd
• Package: 44-pin TSOP (Type II) 48-pin mini BGA
• Commercial and Industrial temperature support
• Lead-free available